发明名称 OPTICAL PROXIMITY EFFECT CORRECTION METHOD, PROCESSING UNIT, PROGRAM, PRODUCTION METHOD OF MASK, AND PRODUCTION METHOD OF SEMICONDUCTOR DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To provide an optical proximity effect correction method in which optical proximity effect correction can be easily and approximately performed; a processing unit; a program; a production method of a mask; and a production method of a semiconductor device.SOLUTION: In an optical proximity effect correction method, an OPC processing object layout pattern is extracted from an OPC execution region in which a difference layout pattern is assumed an origin, rule base OPC processing is performed to an OPC processing object layout pattern to generate an after OPC layout pattern, a replacement object after OPC layout pattern and a before modification after OPC layout pattern are used, and OPC layout data of an after modification layout pattern are acquired. An OPC execution region is a region in which only a distance A is removed as that a difference layout pattern is assumed an origin, and a layout data extraction region is a region in which a distance C is removed as that a difference layout pattern is assumed an origin.</p>
申请公布号 JP2014081472(A) 申请公布日期 2014.05.08
申请号 JP20120228829 申请日期 2012.10.16
申请人 RENESAS ELECTRONICS CORP 发明人 HAYANO KENJI
分类号 G03F1/36;H01L21/027 主分类号 G03F1/36
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