发明名称 |
PREVENTION OF FIN EROSION FOR SEMICONDUCTOR DEVICES |
摘要 |
A dielectric metal compound liner can be deposited on a semiconductor fin prior to formation of a disposable gate structure. The dielectric metal compound liner protects the semiconductor fin during the pattering of the disposable gate structure and a gate spacer. The dielectric metal compound liner can be removed prior to formation of source and drain regions and a replacement gate structure. Alternately, a dielectric metal compound liner can be deposited on a semiconductor fin and a gate stack, and can be removed after formation of a gate spacer. Further, a dielectric metal compound liner can be deposited on a semiconductor fin and a disposable gate structure, and can be removed after formation of a gate spacer and removal of the disposable gate structure. The dielectric metal compound liner can protect the semiconductor fin during formation of the gate spacer in each embodiment. |
申请公布号 |
US2014124840(A1) |
申请公布日期 |
2014.05.08 |
申请号 |
US201213670674 |
申请日期 |
2012.11.07 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;GLOBALFOUNDRIES INC. |
发明人 |
KHAKIFIROOZ ALI;ADAM THOMAS N.;CHENG KANGGUO;PONOTH SHOM;REZNICEK ALEXANDER;SREENIVASAN RAGHAVASIMHAN;CAI XIUYU;XIE RUILONG |
分类号 |
H01L29/78;H01L21/311;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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