发明名称 HIGH-VOLTAGE TOLERANT BIASING ARRANGEMENT USING LOW-VOLTAGE DEVICES
摘要 A reference circuit includes an NMOS transistor, a PMOS transistor and a bias circuit. The NMOS transistor includes a source connected with a first voltage supply and a gate adapted to receive a first bias signal. The PMOS transistor includes a source connected with a second voltage supply, a gate adapted to receive a second bias signal, and a drain connected with a drain of the NMOS transistor at an output of the reference circuit. The bias circuit generates the first and second bias signals. Magnitudes the first and second bias signals are configured to control a reference signal generated by the reference circuit such that when the reference signal is near a quiescent value of the reference signal, a current in the reference circuit is below a first level, and when the reference signal is outside of the prescribed limits, the current in the reference circuit increases nonlinearly.
申请公布号 US2014125404(A1) 申请公布日期 2014.05.08
申请号 US201213671808 申请日期 2012.11.08
申请人 LSI CORPORATION 发明人 KUMAR PANKAJ;PARAMESWARAN PRAMOD;DESHPANDE VANI;KOTHANDARAMAN MAKESHWAR
分类号 G05F3/16 主分类号 G05F3/16
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