CARBON NANOWALL ARRAY AND METHOD FOR MANUFACTURING CARBON NANOWALL

摘要

A carbon nanowall array (10) is provided with a substrate (1) and carbon nanowalls (2-9). The substrate (1) is composed of silicon, and includes protruding portions (11) and recessed portions (12). The protruding portions (11) and recessed portions (12) are formed in the direction (DR1) on one surface of the substrate (1). The protruding portions (11) and recessed portions (12) are alternately formed in the direction (DR2) perpendicular to the direction (DR1). Each of the protruding portions (11) has a length of 0.1-0.5μm in the direction (DR2), and each of the recessed portions (12) has a length of 0.6-1.5μm in the direction (DR2). The height of each of the protruding portions (11) is 0.3-0.6μm. Respective carbon nanowalls (2-9) are formed in the length direction (i.e., the direction (DR1)) of the protruding portions (11) of the substrate (1), said carbon nanowalls being formed on the protruding portions (11).