发明名称 SEMICONDUCTOR DEVICE
摘要 According to one embodiment, a semiconductor device includes: a first electrode; a second electrode; a first semiconductor layer provided between the first electrode and the second electrode; a second semiconductor layer provided between the first semiconductor layer and the second electrode, and the second semiconductor layer having a lower impurity concentration than the first semiconductor layer; a first semiconductor region provided between part of the second semiconductor layer and the second electrode; a second semiconductor region provided between a portion different from the part of the second semiconductor layer and the second electrode, and the second semiconductor region being in contact with the first semiconductor region; and a third semiconductor region provided between at least part of the first semiconductor region and the second electrode.
申请公布号 US2014124832(A1) 申请公布日期 2014.05.08
申请号 US201314013741 申请日期 2013.08.29
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 OGURA TSUNEO;MATSUDAI TOMOKO;OSHINO YUICHI;MISU SHINICHIRO;IKEDA YOSHIKO;NAKAMURA KAZUTOSHI
分类号 H01L29/739 主分类号 H01L29/739
代理机构 代理人
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