发明名称 |
HEMT with Compensation Structure |
摘要 |
A high electron mobility transistor includes a source, a gate and a drain, a first III-V semiconductor region, and a second III-V semiconductor region below the first III-V semiconductor region. The high electron mobility transistor further includes a compensation structure interposed between the first and second III-V semiconductor regions so that the first and second III-V semiconductor regions are spaced apart from one another by the compensation structure. The compensation structure has a different band gap than the first and second III-V semiconductor regions. |
申请公布号 |
US2014124791(A1) |
申请公布日期 |
2014.05.08 |
申请号 |
US201414155926 |
申请日期 |
2014.01.15 |
申请人 |
INFINEON TECHNOLOGIES AUSTRIA AG |
发明人 |
CURATOLA GILBERTO;HÄBERLEN OLIVER |
分类号 |
H01L29/778;H01L27/06;H01L29/66 |
主分类号 |
H01L29/778 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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