OSCILLATING DEVICE AND MANUFACTURING METHOD THEREFOR

摘要

Provided is an oscillating device which has outstanding frequency temperature characteristics, and which is not susceptible to a deterioration in Q value.　Oscillating arms (3a, 3b, 3c) are connected to a support part (2), and oscillating arms (3a, 3b, 3c) have an n-type Si layer (11) which is a degenerate semiconductor, and an exciter (14) provided on the n-type Si layer (11). The oscillating device (1) uses a curved oscillating mode, and the exciter (14) has first and second electrodes (16, 17) which are provided so as to sandwich the piezoelectric film (15) and the piezoelectric film (15).