| 摘要 |
<p>Provided is a method for manufacturing an epitaxial wafer, and the method comprises: a preliminarily growing step of growing an epitaxial layer up to a designated first thickness by a designated first growth speed at a designated first growth temperature by injecting a reaction source for epitaxial growth on a semiconductor wafer arranged within a chamber; a heat treatment step of performing heat treatment for the preliminarily grown epitaxial layer for a predetermined time; and a subsequent growing step of growing the epitaxial layer up to a target thickness by a designated second growth speed at a designated second growth temperature by injecting the reaction source on the thermally treated semiconductor wafer, wherein the first growth speed is slower than the second growth speed.</p> |
