| 摘要 |
A semiconductor light generating device with improved luminous efficiency is disclosed. The semiconductor light generating device comprises: an active layer which generates light by recoupling of electrons and holes; an n-type ZnO-based semiconductor layer which is positioned at a side of the active layer, and into which the electrons are injected; a p-type GaN-based semiconductor layer which is positioned at the other side of the active layer, and into which the holes are injected; and an electron barrier layer which is positioned between the active layer and the p-type GaN-based semiconductor layer, wherein the electron barrier layer has a type-2 band arrangement including a GaN-based semiconductor. Thus, the semiconductor light generating device of the present invention has a hybrid structure comprising an N side constituted by ZnO-based semiconductors and a P side constituted by GaN-based semiconductors, thereby improving the luminous efficiency and solving the difficulty in doping p-type impurities when manufacturing a light generating device using only ZnO-based semiconductors. In addition, carriers can be easily injected since the electron barrier layer capable of blocking the electrons and passing the holes has a type-2 heterojunction structure by GaN-based semiconductors. |
