Improvements relating to the production of semi-conductor devices

摘要

930,091. Semi-conductor devices. INTERNATIONAL NICKEL CO. (MOND) Ltd. June 13, 1961 [June 24, 1960], No. 22225/60. Class 37. [Also in Groups XXII and XXIII] A conductive joint is made between a wire or similar conductor and a metal layer firmly adherent to a semi-conductor body by placing the end of the conductor against the metal layer and embedding it in a paste-like dispersion of a metal powder in a liquid which is or which contains a thermally decomposable compound, the assembly being heated to decompose this compound leaving the metal to form a bond between the metal layer and the conductor. Conveniently the thermally decomposable compound is itself metal bearing, but the metal is not necessarily that used as the powder in the dispersion. The metal layer on the semiconductor body may be obtained by heating a layer of the metal dispersion but is preferably obtained by heating a layer of metal-bearing compound not containing dispersed metal powder. Examples are given of the conditions of the process. Metal powders mentioned are of silver, gold, platinum metals, nickel, and copper. The wire may be of platinum, palladium, or silver, and metal-bearing compounds of gold and platinum are mentioned. Semi-conductors to which the process is applicable include silicon, germanium, AIIIBV compounds, silicon carbide, bismuth telluride, lead telluride (see Provisional Specification), and refractory-like oxides such as nickel oxide and ruthenium dioxide. Specifications 878,821 and 878,822 are referred to.