| 发明名称 |
FINFET WITH DUMMY GATE ON NON-RECESSED SHALLOW TRENCH ISOLATION(STI) |
| 摘要 |
A fin field effect transistor (FinFET) device of an embodiment includes fins formed from a semiconductor substrate, a non-recessed shallow trench isolation (STI) region arranged between the fins, and a dummy gate arranged on the non-recessed STI region. |
| 申请公布号 |
KR20140053753(A) |
申请公布日期 |
2014.05.08 |
| 申请号 |
KR20120155234 |
申请日期 |
2012.12.27 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
LIU CHI WEN;WANG CHAO HSIUNG |
| 分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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