发明名称 WAFER PROCESSING METHOD
摘要 In a wafer processing method, grooves are formed on the front side of a wafer along all division lines extending in a first direction and along all division lines extending in a second direction perpendicular to the first direction. Each groove has a depth corresponding to a finished thickness of each device in the wafer. The wafer is cut into four sectorial wafer quarters. A protective member is provided on the front side of each wafer quarter; and the back side of the wafer quarter is ground to reduce the thickness of the wafer quarter to the finished thickness until the grooves are exposed to the back side of the wafer quarter, thereby dividing the wafer quarter into the individual devices.
申请公布号 US2014127884(A1) 申请公布日期 2014.05.08
申请号 US201314056640 申请日期 2013.10.17
申请人 DISCO CORPORATION 发明人 SEKIYA KAZUMA
分类号 H01L21/78 主分类号 H01L21/78
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