| 摘要 |
931,350. Photo-electric devices. SIEMENS & HALSKE A.G. Oct. 31, 1961 [Oct. 31, 1960], No. 38877/61. Class 37. A photo-electric arrangement comprises a semi-conductor rod having a longitudinal PN junction, at least part of the rod being situated at the focal point or along the focal line of an optical system. Figs. 1 and 2 show a silicon rod 2 having a PN junction 3 between surface region 6 and core 7. The rod is mounted along the focal line of mirror 1 and conducts to the regions and provided by metal strips 4 and 5. A plurality of such arrangements may be joined together as shown in Fig. 5 which shows a modification whereby the rods lie along the axes of paraboloid mirrors. The assembly may be embedded in a transparent synthetic resin the front portion bearing a glass plate to prevent loss of efficiency due to discoloration of the synthetic material. The rod may be made by depositing a high resistivity (1 ohm cm.) surface region on to a low-resistivity silicon rod by thermal decomposition of a gaseous silicon compound and then providing an outside surface layer of opposite conductivity type by diffusion or by further deposition from the decomposition of a gaseous compound of silicon and a gaseous compound of a suitable impurity. Alternatively, a silicon rod may be heated by passage of current to evaporate off impurities from its surface region into which is then diffused impurities to produce the PN junction. The arrangement may be employed for phototransistors. |
