发明名称 |
BONDED STRUCTURE |
摘要 |
A bonded structure 106 includes a semiconductor element 102 bonded to a Cu electrode 103 with a bonding material 104 predominantly composed of Bi, wherein the semiconductor element 102 and the Cu electrode 103 are bonded to each other via a laminated body 209a that progressively increases a Young's modulus from the bonding material 104 to a bonded material (the semiconductor element 102 and the Cu electrode 103), achieving stress relaxation against a thermal stress generated in a temperature cycle during the use of a power semiconductor module. |
申请公布号 |
EP2717303(A4) |
申请公布日期 |
2014.05.07 |
申请号 |
EP20120793525 |
申请日期 |
2012.05.22 |
申请人 |
PANASONIC CORPORATION |
发明人 |
NAKAMURA, TAICHI;KITAURA, HIDETOSHI;YOSHIZAWA, AKIHIRO |
分类号 |
H01L23/488;B23K1/00;B23K1/20;B23K35/14;B23K35/26;C22C12/00;H01L23/34 |
主分类号 |
H01L23/488 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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