发明名称 Semiconductor DBR laser
摘要 A semiconductor distributed Bragg reflector DBR laser 200 is configured for single longitudinal mode operation. The optical waveguide comprises an optical gain section, a first distributed Bragg reflector (DBR) section comprising a grating 228 configured to produce a reflection spectrum having one or more first reflective peaks, and a second reflector 210. The first DBR section is configured to compensate for thermal chirp that is induced inhomogeneously along the length of the DBR section, in use. The first DBR section may have a built -in effective chirp or, it may have a constant pitch, or the waveguide width may increase away from the end of the first DBR section closest to the gain section. Alternatively, the first DBR section may comprise a curved optical waveguide and the grating may have lines that are parallel. A temperature control element may also be used to heat or cool the first DBR section inhomogeneously along the length of the first DBR section. A second DBR reflector 208 may also be present.
申请公布号 GB2507527(A) 申请公布日期 2014.05.07
申请号 GB20120019694 申请日期 2012.11.01
申请人 OCLARO TECHNOLOGY LIMITED 发明人 SAM DAVIES;ANDREW WARD;ANDREW CARTER
分类号 H01S5/0625;H01S5/10;H01S5/125 主分类号 H01S5/0625
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