发明名称 |
TANTALUM SPUTTERING TARGET AND METHOD FOR MANUFACTURING SAME |
摘要 |
Provided is a tantalum sputtering target having a (200)-plane orientation ratio of 70% or less and a (222)-plane orientation ratio of 10% or more at the sputtering surface of the tantalum sputtering target. The sputter rate can be increased by controlling the crystalline orientation of the target, and thereby a film having an intended thickness can be formed in a short time to improve the throughput. |
申请公布号 |
EP2728038(A1) |
申请公布日期 |
2014.05.07 |
申请号 |
EP20120852962 |
申请日期 |
2012.11.15 |
申请人 |
JX NIPPON MINING & METALS CORPORATION |
发明人 |
SENDA SHINICHIRO;NAGATSU KOTARO |
分类号 |
C23C14/34;C01B21/06;C23C14/06;C23C14/18;H01L21/28;H01L21/285 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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