| 摘要 |
<p>A manufacturing method of an arrayed substrate is disclosed, in which ion-doping is performed by using photoresist as a barrier layer instead of using a gate electrode, which process can reduces the short channel effect that is caused by diffusion of doped ions toward a channel region, and meanwhile decrease the coupling capacitance between the gate electrode and the source-drain electrodes, thereby improving the performance of the prepared TFT.</p> |
