SEMICONDUCTOR DEVICE, SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE

摘要

There is provided a semiconductor device including a first channel-type first MISFET formed and a second channel-type second MISFET: a first source and a first drain of the first MISFET and a second source and a second drain of the second MISFET are made of the same conductive substance, and the work functionΦM of the conductive substance satisfies at least one of relations respectively represented by (1)φ1<ΦM<φ2+Eg2, and (2) |ΦM−Φ1|≰0.1 eV and |(φ2+Eg2)−ΦM|≰0.1 eV, whereφ1 represents an electron affinity of an N-type semiconductor crystal layer, andφ2 and Eg2 represent an electron affinity and a band gap of a crystal of a P-type semiconductor crystal layer.