Resistive memory including bipolar transistor access devices

摘要

A memory includes a first bipolar transistor, a first bit line, and a first resistive memory element coupled between a collector of the first bipolar transistor and the first bit line. The memory includes a second bit line, a second resistive memory element coupled between an emitter of the first bipolar transistor and the second bit line, and a word line coupled to a base of the first bipolar transistor.