Segmented semiconductor nanowires are manufactured by removal of material from a layered structure of two or more semiconductor materials in the absence of a template. The removal takes place at some locations on the surface of the layered structure and continues preferentially along the direction of a crystallographic axis, such that nanowires with a segmented structure remain at locations where little or no removal occurs. The interface between different segments can be perpendicular to or at angle with the longitudinal direction of the nanowire.
申请公布号
EP2257968(A4)
申请公布日期
2014.05.07
申请号
EP20090724159
申请日期
2009.01.29
申请人
INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人
HOVEL, HAROLD, J.;HUANG, QIANG;SHAO, XIAOYAN;VICHICONTI, JAMES;WALKER, GEORGE, F.