发明名称 DIFFERENTIAL MOSCAP DEVICE
摘要 <p>The present invention relates to a differential MOSCAP device including two capacitor sections combined with a different gate and operating by using different signals. Each signal is different by 180°phase. Each capacitor section of the differential capacitor prevents parasitic capacitance by including at least two upper capacitor plates disposed on single common lower capacitor plate functioning as a common node. The upper capacitor plates of a first capacitor section are adjacent to each other without any electrical components between them. The upper capacitor plates of a second capacitor section are adjacent to each other without any electrical components between them. The upper capacitor plate is composed of multiple laminated conductive layers in some embodiments.</p>
申请公布号 KR20140052790(A) 申请公布日期 2014.05.07
申请号 KR20120149657 申请日期 2012.12.20
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 YEN HSIAO TSUNG;LIN YU LING;KUO CHIN WEI;JENG MIN CHIE
分类号 H01L27/108;H01L21/8242 主分类号 H01L27/108
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