发明名称 |
DIFFERENTIAL MOSCAP DEVICE |
摘要 |
<p>The present invention relates to a differential MOSCAP device including two capacitor sections combined with a different gate and operating by using different signals. Each signal is different by 180°phase. Each capacitor section of the differential capacitor prevents parasitic capacitance by including at least two upper capacitor plates disposed on single common lower capacitor plate functioning as a common node. The upper capacitor plates of a first capacitor section are adjacent to each other without any electrical components between them. The upper capacitor plates of a second capacitor section are adjacent to each other without any electrical components between them. The upper capacitor plate is composed of multiple laminated conductive layers in some embodiments.</p> |
申请公布号 |
KR20140052790(A) |
申请公布日期 |
2014.05.07 |
申请号 |
KR20120149657 |
申请日期 |
2012.12.20 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
YEN HSIAO TSUNG;LIN YU LING;KUO CHIN WEI;JENG MIN CHIE |
分类号 |
H01L27/108;H01L21/8242 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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