| 摘要 |
PROBLEM TO BE SOLVED: To provide a PCVD method capable of forming microcrystalline silicon using a hydrogen gas at a low flow rate and to provide a more inexpensive microcrystalline silicon solar cell.SOLUTION: The method for forming microcrystalline silicon by PCVD method comprises the steps of: aligning a plurality of antennas having both ends respectively connected to an a high frequency power supply and the ground in a plane in a vacuum chamber to arrange as an array antenna structure; arranging a substrate opposite to the array antennas; setting a temperature of the substrate to 150-250°C; introducing a mixed gas including a hydrogen gas and a silane gas; supplying high frequency power to the plurality of antennas to generate plasma; and adjusting a flow rate ratio of the hydrogen gas to the silane gas in a range of 1-10 to form a microcrystalline silicon film where a ratio Ic/Ia of Raman scattering intensity Ic in the vicinity of 520 cmresulting from crystalline silicon and Raman scattering intensity Ia in the vicinity of 480 cmresulting from amorphous silicon is 2-6, on the substrate. |
