| 摘要 |
A vacuum processing device and a vacuum processing method that strongly chuck and hold an insulating substrate when plasma processing is performed are provided. The vacuum processing device includes a vacuum chamber that is grounded; a vacuum evacuation device connected to the vacuum chamber; a chuck device arranged inside the vacuum chamber; a chuck power supply for applying an output voltage to a single-pole type electrode provided in the chuck device; a plasma generation gas introduction device for introducing a plasma generation gas into the vacuum chamber; and a plasma generation portion which converts the plasma generation gas into plasma. An object to be processed is arranged on the chuck device; and the chuck power supply applies an output voltage to the single-pole type electrode while the plasma is being generated inside the vacuum chamber; and the object to be processed is processed by the plasma while the object to be processed is being chucked by the chuck device. An insulating substrate is used as the object to be processed and the chuck power supply applies the output voltage that periodically changes between a positive voltage and a negative voltage to the single-pole type electrode. |
