LIGHT EMITTING DEVICE

摘要

A light emitting device according to an embodiment comprises a first conductive semiconductor layer; a second conductive semiconductor layer; and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer. A plurality of well layers and a plurality of barrier layers with a bigger energy band gap than that of the well layer are alternately laminated on the active layer. The active layer satisfies a range of 1.2d_2 <= d1 <= 2d_2, wherein d_1 is the thickness of the well layer and d_2 is the thickness of the barrier layer.