TUNGSTEN CARBIDE COATED METAL COMPONENT OF A PLASMA REACTOR CHAMBER AND METHOD OF COATING

摘要

A tungsten carbide coated chamber component of semiconductor processing equipment includes a metal surface, an optional intermediate nickel coating, and an outer tungsten carbide coating. The component is manufactured by optionally depositing the nickel coating on the metal surface of the component and depositing the tungsten carbide coating on the metal surface or nickel coating to form an outermost surface.