发明名称 |
Light emitting device and method for manufacturing the same |
摘要 |
Disclosed herein is a light emitting device. The light emitting device includes an n-type nitride semiconductor layer; an active layer on the n-type semiconductor layer, an AlN/GaN layer of a super lattice structure formed by alternately growing an AlN layer and a GaN layer on the active layer, and a p-type nitride semiconductor layer on the AlN/GaN layer of the super lattice structure. At least one of the AlN layer and the GaN layer is doped with a p-type dopant. A method for manufacturing the light emitting device is also provided. |
申请公布号 |
US8716048(B2) |
申请公布日期 |
2014.05.06 |
申请号 |
US20100775119 |
申请日期 |
2010.05.06 |
申请人 |
KIM GYU BEOM;LEE SANG JOON;HAN CHANG SUK;KIM KWANG CHOONG;SEOUL OPTO DEVICE CO., LTD. |
发明人 |
KIM GYU BEOM;LEE SANG JOON;HAN CHANG SUK;KIM KWANG CHOONG |
分类号 |
H01L21/00;H01L33/06;H01L33/12;H01L33/32 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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