发明名称 |
Method and apparatus pertaining to a ferroelectric random access memory |
摘要 |
An FRAM device can comprise a sense amplifier and at least a first bitcell. The first bitcell can have a bit line and a complimentary bit line that connects to the sense amplifier. A first precharge circuit responds to a first control signal during a test mode of operation to precharge the bit line with respect to a first voltage while a second precharge circuit responds to a second control signal (that is different from the first control signal) during the test mode of operation to precharge the complimentary bit line with respect to a test voltage that is different than the first voltage (such as, but not limited to, a test voltage of choice such as a voltage that is greater than ground but less than the first voltage). |
申请公布号 |
US8717800(B2) |
申请公布日期 |
2014.05.06 |
申请号 |
US201113243911 |
申请日期 |
2011.09.23 |
申请人 |
CLINTON MICHAEL PATRICK;BARTLING STEVEN CRAIG;SUMMERFELT SCOTT;MCADAMS HUGH;TEXAS INSTRUMENTS INCORPORATED |
发明人 |
CLINTON MICHAEL PATRICK;BARTLING STEVEN CRAIG;SUMMERFELT SCOTT;MCADAMS HUGH |
分类号 |
G11C11/22 |
主分类号 |
G11C11/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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