发明名称 Device with integrated power supply
摘要 Semiconductor devices and methods for forming a semiconductor device are disclosed. The semiconductor device includes a die. The die includes a die substrate having first and second major surfaces. The semiconductor device includes a power module disposed below the second major surface of the die substrate. The power module is electrically coupled to the die through silicon via (TSV) contacts.
申请公布号 US8716856(B2) 申请公布日期 2014.05.06
申请号 US201213565748 申请日期 2012.08.02
申请人 TAN JUAN BOON;LIM YEOW KHENG;SIAH SOH YUN;LIU WEI;GONG SHUNQIANG;GLOBALFOUNDRIES SINGAPORE PTE. LTD. 发明人 TAN JUAN BOON;LIM YEOW KHENG;SIAH SOH YUN;LIU WEI;GONG SHUNQIANG
分类号 H01L23/52 主分类号 H01L23/52
代理机构 代理人
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