发明名称 Multi channel semiconductor memory device and semiconductor device including the same
摘要 Disclosed is a semiconductor memory device that includes a plurality of channel memories mounted within a package and is capable of minimizing or reducing the number of through-silicon vias. With the semiconductor memory device, a row command or a row address on two or more channels is applied through a shared bus. The semiconductor memory device is capable of reducing an overhead of a die size by reducing the number of through-silicon vias. A method of driving a multi-channel semiconductor memory device including a plurality of memories, using a shared bus, is also provided.
申请公布号 US8717828(B2) 申请公布日期 2014.05.06
申请号 US201113298653 申请日期 2011.11.17
申请人 KIM HYUN-JOONG;LEE DONGYANG;SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM HYUN-JOONG;LEE DONGYANG
分类号 G11C7/00;G11C7/22 主分类号 G11C7/00
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