发明名称 |
Multi channel semiconductor memory device and semiconductor device including the same |
摘要 |
Disclosed is a semiconductor memory device that includes a plurality of channel memories mounted within a package and is capable of minimizing or reducing the number of through-silicon vias. With the semiconductor memory device, a row command or a row address on two or more channels is applied through a shared bus. The semiconductor memory device is capable of reducing an overhead of a die size by reducing the number of through-silicon vias. A method of driving a multi-channel semiconductor memory device including a plurality of memories, using a shared bus, is also provided. |
申请公布号 |
US8717828(B2) |
申请公布日期 |
2014.05.06 |
申请号 |
US201113298653 |
申请日期 |
2011.11.17 |
申请人 |
KIM HYUN-JOONG;LEE DONGYANG;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM HYUN-JOONG;LEE DONGYANG |
分类号 |
G11C7/00;G11C7/22 |
主分类号 |
G11C7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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