发明名称 |
Method and system for junction termination in GaN materials using conductivity modulation |
摘要 |
A semiconductor structure includes a GaN substrate having a first surface and a second surface opposing the first surface. The GaN substrate is characterized by a first conductivity type and a first dopant concentration. The semiconductor structure also includes a first GaN epitaxial layer of the first conductivity type coupled to the second surface of the GaN substrate and a second GaN epitaxial layer of a second conductivity type coupled to the first GaN epitaxial layer. The second GaN epitaxial layer includes an active device region, a first junction termination region characterized by an implantation region having a first implantation profile, and a second junction termination region characterized by an implantation region having a second implantation profile. |
申请公布号 |
US8716716(B2) |
申请公布日期 |
2014.05.06 |
申请号 |
US201113334742 |
申请日期 |
2011.12.22 |
申请人 |
NIE HUI;EDWARDS ANDREW P.;DISNEY DONALD R.;BROWN RICHARD J.;KIZILYALLI ISIK C.;AVOGY, INC. |
发明人 |
NIE HUI;EDWARDS ANDREW P.;DISNEY DONALD R.;BROWN RICHARD J.;KIZILYALLI ISIK C. |
分类号 |
H01L21/335;H01L29/20 |
主分类号 |
H01L21/335 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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