发明名称 Variable resistance memory device with an interfacial adhesion heating layer, systems using the same and methods of forming the same
摘要 A variable resistance memory element and method of forming the same. The memory element includes a first electrode, a resistivity interfacial layer having a first surface coupled to said first electrode; a resistance changing material, e.g. a phase change material, having a first surface coupled to a second surface of said resistivity interfacial layer, and a second electrode coupled to a second surface of said resistance changing material.
申请公布号 US8717799(B2) 申请公布日期 2014.05.06
申请号 US201213587465 申请日期 2012.08.16
申请人 LIU JUN;MICRON TECHNOLOGY, INC. 发明人 LIU JUN
分类号 G11C17/00 主分类号 G11C17/00
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