发明名称 |
Methods for bonding semiconductor structures involving annealing processes, and bonded semiconductor structures and intermediate structures formed using such methods |
摘要 |
Methods of bonding together semiconductor structures include annealing metal of a feature on a semiconductor structure prior to directly bonding the feature to a metal feature of another semiconductor structure to form a bonded metal structure, and annealing the bonded metal structure after the bonding process. The thermal budget of the first annealing process may be at least as high as a thermal budget of a later annealing process. Additional methods involve forming a void in a metal feature, and annealing the metal feature to expand the metal of the feature into the void. Bonded semiconductor structures and intermediate structures are formed using such methods. |
申请公布号 |
US8716105(B2) |
申请公布日期 |
2014.05.06 |
申请号 |
US201113076745 |
申请日期 |
2011.03.31 |
申请人 |
SADAKA MARIAM;RADU IONUT;LANDRU DIDIER;SOITEC |
发明人 |
SADAKA MARIAM;RADU IONUT;LANDRU DIDIER |
分类号 |
H01L21/30;H01L21/00;H01L21/46;H01L23/00 |
主分类号 |
H01L21/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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