发明名称 |
Structure for self-aligned silicide contacts to an upside-down FET by epitaxial source and drain |
摘要 |
A method for fabricating an upside-down p-FET includes: fully etching source and drain regions in a donor substrate by etching a silicon-on-insulator layer through buried oxide and partially etching the silicon substrate; refilling a bottom and sidewall surfaces of the etched source and drain regions with epitaxial silicide/germanide to form e-SiGe source and drain regions; capping the source and drain regions with self-aligning silicide/germanide; providing a silicide layer formed over the gate conductor line; providing a first stress liner over the gate and the e-SiGe source and drain regions; depositing a planarized dielectric over the self-aligning silicide/germanide; inverting the donor substrate; bonding the donor substrate to a host wafer; and selectively exposing the buried oxide and the e-SiGe source and drain regions by removing the donor wafer. |
申请公布号 |
US8716091(B2) |
申请公布日期 |
2014.05.06 |
申请号 |
US20100750342 |
申请日期 |
2010.03.30 |
申请人 |
COHEN GUY;FRANK DAVID JAMES;LAUER ISAAC;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
COHEN GUY;FRANK DAVID JAMES;LAUER ISAAC |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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