摘要 |
An eFuse structure having a first metal layer serving as a fuse with a gate including an undoped polysilicon (poly), a second metal layer and a high-K dielectric layer all formed on a silicon substrate with a Shallow Trench Isolation formation, and a process of fabricating same are provided. The eFuse structure enables use of low amounts of current to blow a fuse thus allowing the use of a smaller MOSFET. |