发明名称 |
Reduced pattern loading using silicon oxide multi-layers |
摘要 |
Aspects of the disclosure pertain to methods of depositing conformal silicon oxide multi-layers on patterned substrates. The conformal silicon oxide multi-layers are each formed by depositing multiple sub-layers. Sub-layers are deposited by flowing BIS(DIETHYLAMINO)SILANE (BDEAS) and an oxygen-containing precursor into a processing chamber such that a relatively uniform dielectric growth rate is achieved across the patterned substrate surface. A plasma treatment may follow formation of sub-layers to further improve conformality and to decrease the wet etch rate of the conformal silicon oxide multi-layer film. The deposition of conformal silicon oxide multi-layers grown according to embodiments have a reduced dependence on pattern density while still being suitable for non-sacrificial applications. |
申请公布号 |
US8716154(B2) |
申请公布日期 |
2014.05.06 |
申请号 |
US201113251621 |
申请日期 |
2011.10.03 |
申请人 |
BHATIA SIDHARTH;GEE PAUL EDWARD;VENKATARAMAN SHANKAR;APPLIED MATERIALS, INC. |
发明人 |
BHATIA SIDHARTH;GEE PAUL EDWARD;VENKATARAMAN SHANKAR |
分类号 |
H01L21/31;H01L21/02 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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