发明名称 Anti-reflection structures for CMOS image sensors
摘要 Optical structures having an array of protuberances between two layers having different refractive indices are provided. The array of protuberances has vertical and lateral dimensions less than the wavelength range of lights detectable by a photodiode of a CMOS image sensor. The array of protuberances provides high transmission of light with little reflection. The array of protuberances may be provided over a photodiode, in a back-end-of-line interconnect structure, over a lens for a photodiode, on a backside of a photodiode, or on a window of a chip package.
申请公布号 US8716771(B2) 申请公布日期 2014.05.06
申请号 US201213418706 申请日期 2012.03.13
申请人 ADKISSON JAMES W.;ELLIS-MONAGHAN JOHN J.;GAMBINO JEFFREY P.;MUSANTE CHARLES F.;INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 ADKISSON JAMES W.;ELLIS-MONAGHAN JOHN J.;GAMBINO JEFFREY P.;MUSANTE CHARLES F.
分类号 H01L31/10;H01L31/112 主分类号 H01L31/10
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