Diode for electrostatic protection

摘要

Provided is an electrostatic discharge (ESD) protection diode that is formed on an input/output pad of an integrated circuit (IC), the ESD protection diode including: an N-type semiconductor that constitutes a first diode and is connected to a pad for a power supply voltage; a P-type semiconductor that constitutes the first diode and is connected to a signal line; an N-type semiconductor that constitutes a second diode and is connected to the signal line; a P-type semiconductor that constitutes the second diode and is connected to a pad for grounding; and a third diode that is formed by contacting the N-type semiconductor of the first diode and the P-type semiconductor of the second diode.