发明名称 Estimation of memory cell wear level based on saturation current
摘要 A method includes measuring a saturation current flowing through one or more analog memory cells. A wear level of the memory cells is deduced from the measured saturation current. Storage of data in the memory cells is configured based on the deduced wear level.
申请公布号 US8717826(B1) 申请公布日期 2014.05.06
申请号 US201213710938 申请日期 2012.12.11
申请人 APPLE INC. 发明人 GURGI EYAL;SOMMER NAFTALI;SHUR YAEL
分类号 G11C11/34 主分类号 G11C11/34
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