发明名称 |
Methods of containing defects for non-silicon device engineering |
摘要 |
An apparatus including a device including a channel material having a first lattice structure on a well of a well material having a matched lattice structure in a buffer material having a second lattice structure that is different than the first lattice structure. A method including forming a trench in a buffer material; forming an n-type well material in the trench, the n-type well material having a lattice structure that is different than a lattice structure of the buffer material; and forming an n-type transistor. A system including a computer including a processor including complimentary metal oxide semiconductor circuitry including an n-type transistor including a channel material, the channel material having a first lattice structure on a well disposed in a buffer material having a second lattice structure that is different than the first lattice structure, the n-type transistor coupled to a p-type transistor. |
申请公布号 |
US8716751(B2) |
申请公布日期 |
2014.05.06 |
申请号 |
US201213631417 |
申请日期 |
2012.09.28 |
申请人 |
GOEL NITI;PILLARISETTY RAVI;MUKHERJEE NILOY;CHAU ROBERT S.;RACHMADY WILLY;METZ MATTHEW V.;LE VAN H.;KAVALIEROS JACK T.;RADOSAVLJEVIC MARKO;CHU-KUNG BENJAMIN;DEWEY GILBERT;SUNG SEUNG HOON;INTEL CORPORATION |
发明人 |
GOEL NITI;PILLARISETTY RAVI;MUKHERJEE NILOY;CHAU ROBERT S.;RACHMADY WILLY;METZ MATTHEW V.;LE VAN H.;KAVALIEROS JACK T.;RADOSAVLJEVIC MARKO;CHU-KUNG BENJAMIN;DEWEY GILBERT;SUNG SEUNG HOON |
分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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