| 摘要 |
<p>The invention relates to a resonant diode having a ferromagnetic (FM) tunnel contact for generating an electric current, the amplitude of which is determined by the polarization state of the absorbed light. The invention is essentially characterized by the presence of a stack of semi-conductor layers (B1, W, B2) thus defining a carrier confinement area. The operation principle comprises generating polarized carriers, electron-hole pairs in dual-barrier quantum semi-conductor wells or boxes by the resonant absorption of a light wave having circular or elliptic polarization. The invention can be used as a basic element or in the form of a two-dimensional array as a magnetic memory element, a light polarization detector, or a magnetic field sensor.</p> |
