SEMICONDUCTOR DEVICES HAVING HYBRID CAPACITORS AND METHODS FOR FABRICATING THE SAME

摘要

The present invention relates to a semiconductor device and a method for fabricating the same. The present invention includes a lower electrode and an upper electrode which face each other between dielectric layers, capacitors arranged on a substrate, and a support pattern which touches the sidewalls of the lower electrodes and doubly supports the capacitors in an upper and a lower position. The lower electrode may include a first sub electrode of a pillar type electrically connected to a substrate and a second sub electrode of a cylinder type stacked on the first lower electrode. The support pattern may include an upper pattern touching the sidewalls of the upper part of the lower electrodes and a lower pattern which is vertically separated from the upper pattern, touches the lower sidewalls under the upper part of the lower electrodes, and is transferred with the plane shape of the upper pattern.