发明名称 COMPACT MODEL FOR DEVICE/CIRCUIT/CHIP LEAKAGE CURRENT (IDDQ) CALCULATION INCLUDING PROCESS INDUCED UPLIFT FACTORS
摘要 A system, method and computer program product for implementing a quiescent current leakage specific model into semiconductor device design and circuit design flows. The leakage model covers all device geometries with wide temperature and voltage ranges and, without the need for stacking factor calculations nor spread sheet based IDDQ calculations. The leakage model for IDDQ calculation incorporates further parasitic and proximity effects. The leakage model implements leakage calculations at different levels of testing, e.g., from a single device to a full chip design, and are integrated within one single model. The leakage model implements leakage calculations at different levels of testing with the leverage of a single switch setting. The implementation is via a hardware definition language code or object oriented code that can be compiled and operated using a netlist of interest, e.g., for conducting a performance analysis.
申请公布号 US2014123097(A1) 申请公布日期 2014.05.01
申请号 US201414148234 申请日期 2014.01.06
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 CHANG PAUL;DENG JIE;HOOK TERRENCE B.;LOO SIM Y.;MOCUTA ANDA C.;PARK JEAE-EUN;RIM KERN;YU XIAOJUN
分类号 G06F17/50 主分类号 G06F17/50
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