| 摘要 |
Methods and apparatus for depositing continuous thin films using plasma-activated sub-saturated atomic layer deposition are provided herein. According to various embodiments, pin-hole free continuous films may be deposited at thicknesses thinner than achievable with conventional methods. The methods and apparatus also provide high degree of thickness control, with films a per-cycle thickness tunable to as low as 0.1Åin some embodiments. Further, the methods and apparatus may be used to provide films having improved properties, such as lower wet etch rate, in some embodiments. |
