发明名称 PROTECTION CIRCUIT AND GATE DRIVING CIRCUIT FOR SEMICONDUCTOR SWITCHING DEVICE
摘要 There are provided a protection circuit and a gate driving circuit for a semiconductor switching device. The protection circuit for a semiconductor switching device includes an overcurrent determining unit operated according to a gate signal to determine whether a load current flowing through the semiconductor switching device controlling the load current is an overcurrent, a load open determining unit determining whether a load is open, on the basis of a detection value from a current detection unit detecting the load current, and an error detection unit generating a fault signal when it is determined that the overcurrent flows and the load is open, while the gate signal is in a turned on level of the semiconductor switching device.
申请公布号 US2014118872(A1) 申请公布日期 2014.05.01
申请号 US201313794194 申请日期 2013.03.11
申请人 SAMSUNG ELECTRO-MECHANICS CO., LTD. 发明人 PANG SUNG MAN
分类号 H02H3/08;G01R31/327 主分类号 H02H3/08
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