A method and apparatus for the production of C-plane single crystal sapphire is disclosed. The method and apparatus may use edge defined film-fed growth techniques for the production of single crystal material exhibiting low polycrystallinity and/or low dislocation density.
申请公布号
US2014116323(A1)
申请公布日期
2014.05.01
申请号
US201414147879
申请日期
2014.01.06
申请人
SAINT-GOBAIN CERAMICS & PLASTICS, INC.
发明人
TATARTCHENKO VITALI;JONES CHRISTOPHER D.;ZANELLA STEPHEN ANTHONY;LOCHER JOHN WALTER;PRANADI FERY
