摘要 |
Provided are a capacitive accelerometer of an H-shaped beam and a manufacturing method for the accelerometer. The accelerometer at least comprises: a first electrode structure layer (1), an intermediate structure layer (2), and a second electrode structure layer (3). The first electrode structure layer (1) and the second electrode structure layer (3) respectively are provided with electrode lead-out through holes (9). The intermediate structure layer (2) comprises: an edge frame formed on an oxygen-containing silicon substrate having dual component layers, bilaterally symmetric mass blocks (4), and a bilaterally symmetric H-shaped flexible beam (8) having one beam connected to the edge frame and the other beam connected to the mass block. Anti-overload bumps (5) and damper adjustment grooves (7) are symmetrically arranged on two sides of two mass blocks (4). Also, the H-shaped flexible beam (8) and a bulk silicon layer of the oxygen-containing silicon substrate satisfy therebetween the condition of: √2(a+b+c) < h, where √2d < h, a and c are the widths of the two beams, b is the gap between the two beams, d is the width of the connections where the beams and the mass blocks are connected, and h is the thickness of the bulk silicon layer. The manufacturing method is simple and has a high yield. Components formed are provided with a high degree of normal symmetry, great resistance against lateral impacts and torsional impacts, and reduced cross-sensitivity. |
申请人 |
SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATIONTECHNOLOGY, CHINESE ACADEMY OF SCIENCES |
发明人 |
CHE, LUFENG;ZHOU, XIAOFENG;XIONG, BIN;WANG, YUELIN |