| 摘要 |
<p>This plasma treatment device and method allow evenly performing plasma surface treatment on an object to be treated. A substrate (11) is held by a holder (33) and housed inside a treatment chamber. Electrode units (31, 32) are arranged opposite the surfaces of the substrate (11), and the electrode units (31, 32) are configured from first electrode rows (31a, 32a) and second electrode rows (31b, 32b) comprising high-frequency electrodes (25) and ground electrodes (26) arranged in rows. A process gas emitted from an inlet is passed between the electrodes (25, 26) to generate a plasma, and the generated plasma removes contaminants on the surface of the substrate (11).</p> |
