| 摘要 |
A method comprises: forming a semiconductor device on a base substrate, the semiconductor device having a core metal positioned proximate a source and a drain in the base substrate, a work function metal on a portion of the core metal, and a dielectric layer on a portion of the work function metal; forming a metal gate in electrical communication with one of the source and the drain; and implanting an insulator film on the core metal of the semiconductor device. The insulator film on the core metal forms an insulative barrier across the metal gate and between the core metal of the semiconductor device and the source or the drain. |
