发明名称 |
Method to Improve Reliability of High-k Metal Gate Stacks |
摘要 |
A method of fabricating a gate stack for a semiconductor device includes the following steps after removal of a dummy gate: growing a high-k dielectric layer over an area vacated by the dummy gate; depositing a thin metal layer over the high-k dielectric layer; annealing the replacement gate structure in an ambient atmosphere containing hydrogen; and depositing a gap fill layer. |
申请公布号 |
US2014120707(A1) |
申请公布日期 |
2014.05.01 |
申请号 |
US201213662505 |
申请日期 |
2012.10.28 |
申请人 |
INTERNATIONAL BUSINESS MACHINES, INC. |
发明人 |
ANDO TAKASHI;CARTIER EDUARD A.;LINDER BARRY P.;NARAYANAN VIJAY |
分类号 |
H01L21/28 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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