发明名称 METHOD FOR PRODUCING OPTICAL SEMICONDUCTOR DEVICE
摘要 A method for producing an optical semiconductor device includes the steps of determining a wafer size to make a section arrangement including a plurality of sections in each of which the optical semiconductor device including a semiconductor mesa is formed; obtaining an in-plane distribution of a thickness of a resin layer on a wafer; obtaining a correlation between a thickness of a resin layer and a trench width; forming a trench width map using the in-plane distribution of the thickness and the correlation; preparing an epitaxial substrate by forming a stacked semiconductor layer; forming, on the epitaxial substrate, a mask based on the trench width map; forming a trench structure including the semiconductor mesa by etching the stacked semiconductor layer using the mask; forming a resin layer on the trench structure; and forming an opening on the semiconductor mesa by etching the resin layer.
申请公布号 US2014116983(A1) 申请公布日期 2014.05.01
申请号 US201314057146 申请日期 2013.10.18
申请人 SUMITOMO ELECTRIC INDUSTRIES, LTD. 发明人 KITAMURA TAKAMITSU;YAGI HIDEKI
分类号 G02F1/225 主分类号 G02F1/225
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