发明名称 |
METHOD FOR PRODUCING OPTICAL SEMICONDUCTOR DEVICE |
摘要 |
A method for producing an optical semiconductor device includes the steps of determining a wafer size to make a section arrangement including a plurality of sections in each of which the optical semiconductor device including a semiconductor mesa is formed; obtaining an in-plane distribution of a thickness of a resin layer on a wafer; obtaining a correlation between a thickness of a resin layer and a trench width; forming a trench width map using the in-plane distribution of the thickness and the correlation; preparing an epitaxial substrate by forming a stacked semiconductor layer; forming, on the epitaxial substrate, a mask based on the trench width map; forming a trench structure including the semiconductor mesa by etching the stacked semiconductor layer using the mask; forming a resin layer on the trench structure; and forming an opening on the semiconductor mesa by etching the resin layer. |
申请公布号 |
US2014116983(A1) |
申请公布日期 |
2014.05.01 |
申请号 |
US201314057146 |
申请日期 |
2013.10.18 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
KITAMURA TAKAMITSU;YAGI HIDEKI |
分类号 |
G02F1/225 |
主分类号 |
G02F1/225 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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